Products
Huatai
Huatai's RF LDMOS product line covers a variety of applications such as mobile communication base stations, handheld communications, aerospace, industrial equipment and instruments, and has formed from low frequency (100MHz) to high frequency (3GHz), from low power (2W) to high power ( 1600W), from low voltage (7V) to high voltage (50V), a complete product line with high efficiency and good reliability, which can meet the application of most of China's radar, communication base stations, aerospace, industrial equipment and instruments Claim.
Product Details
Communication base station
Huatai RF LDMOS products are widely used in the fields of mobile communication base stations and repeaters, breaking the monopoly position of power tubes of foreign companies, and improving the competitiveness of core products in the communications field in China and the integrity and security of the industrial chain. Huatai's research and development of GSM 900MHz 140W products, TDD-LTE 1880MHz-2025MHz 120W, 700MHz-2700MHz 10W and other products have been mass-produced by international first-line communication equipment companies, and their performance is comparable to their international counterparts, achieving the domestic breakthrough of RF LDMOS in the field of communication base stations .
| Part Num. | Freq （MHz） | VDD (V) | P1dB (dBm) | Gain (dB) | Pavg (dBm) | Test Freq (MHz) | Target application | Package | Process |
| HTA50P3 | 1800-5000 | 5 | 25 | 29 | 14 | 2600 | 寬帶驅動,5G微站，天線系統 | QFN3×3 | GaAs |
| HTN8G38S004P | 700-3800 | 28 | 36 | 19 | 25 | 2600 | 便攜設備，5G微站 | DFN3×3 | LDMOS |
| HTN7G38S007P | 700-3800 | 28 | 38 | 14.2 | 28 | 3400 | 便攜設備，5G微站 | PDFN5×5 | LDMOS |
| HTN8G27S015P | 700-2700 | 28 | 41 | 20 | 30 | 2600 | 便攜設備，5G微站 | DFN5×5 | LDMOS |
| HTN8G36S015P | 3300-4200 | 28 | 41 | 17 | 30 | 3500 | 便攜設備，5G微站 | DFN5×5 | LDMOS |
| HTN8G27S020P | 700-2700 | 28 | 44 | 17 | 34 | 2600 | MDAS,5G驅動 | TO270 | LDMOS |
| HTN8G27P040P | 2500-2700 | 28 | 46 | 20 | 37 | 2600 | 64T MIMO,5G驅動 | DFN7.5×5 | LDMOS |
| HTH1D27P120H | 2500-2700 | 48 | 51(P3) | 16 | 41.4 | 2600 | 32T MIMO | DFN7×6.5 | GaN |
| HTH1D36P120H | 3400-3600 | 48 | 51(P3) | 14 | 41.4 | 3500 | 32T MIMO | DFN7×6.5 | GaN |
| HTH8G09P550H | 700-821 | 48 | 57.4（P5） | 22 | 49.3 | 778 | 60W基站 | H2110S-4L | LDMOS |
| HTH8G09P350H | 700-821 | 48 | 55.7(P3) | 22 | 47.3 | 778 | 30W/40W基站 | H2110S-4L | LDMOS |
| HTH1D27P450H | 2500-2700 | 48 | 56.5(P5) | 15 | 47.4 | 2600 | 30W/40W基站 | H2110S-4L | GaN |
| HTH1D36P450H | 3400-3600 | 48 | 56.2(P5) | 14 | 47.4 | 3500 | 30W/40W基站 | H2110S-4L | GaN |
| HTN7G27S010P | 700-2700 | 28 | 41 | 19.1 | 31 | 2140 | MDAS,直放站驅動 | PDFN6×5 | LDMOS |
| HTN7G27S020PG | 700~2700 | 28 | 44 | 14.1 | 34 | 2655 | MDAS,直放站驅動 | TO270-A | LDMOS |
| HTN7G21S040P/PG | 700-2100 | 28 | 46 | 16.1 | 36 | 1840 | 直放站28V/北鬥12V | TO270-A | LDMOS |
| HTN7G09S060P | 700~960 | 28 | 49 | 21.8 | 39 | 940 | GSM幹放，專網 | TO270 | LDMOS |
| HTN7G09S120P | 700~960 | 28 | 50 | 22.1 | 40.5 | 881 | 電子圍欄，直放站 | TO270 | LDMOS |
| HTH7G14S150H | 1.8~1400 | 50 | 51.5 | 21.5 | 42 | 860 | 廣播，直放站 | H0906 | LDMOS |
| HTN7G21P160H | 1805~2170 | 28 | 52 | 16.7 | 44.8 | 1960 | 電子圍欄，光纖直放站 | H2110S-6L | LDMOS |
| HTN7G21S160H | 1805~2170 | 28 | 52 | 17.3 | 42 | 1840 | 電子圍欄，光纖直放站 | H2110S-6L | LDMOS |
| HTN7G15P180H | 1300~1500 | 28 | 52.5 | 19 | 45 | 1457 | 專網，軍用 | H2110S-4L | LDMOS |
5G Small base station-MMIC
| Part Num. | Freq （MHz） | VDD (V) | DE （%） | Gain (dB) | Pavg (dBm) | Test Freq (MHz) | Target application | Package | Process |
| H8G0708M06P | 728-821 | 28 | 45 | 19 | 27.5 | 775 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H8G0810M06P | 869-960 | 28 | 45 | 19 | 27.5 | 915 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H8G1819M10P | 1805-1880 | 28 | 43 | 28 | 31 | 1840 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H8G1920M10P | 1880-2025 | 28 | 43 | 28 | 31 | 1950 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H8G2022M10P | 2110-2170 | 28 | 43 | 27 | 31 | 2140 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H8G2324M10P | 2300-2400 | 28 | 41 | 27 | 31 | 2350 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H8G2527M10P | 2500-2700 | 28 | 40 | 26 | 31 | 2595 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H8G3336M12P | 3300-3600 | 28 | 35 | 33 | 32 | 3450 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H8G3638M12P | 3600-3800 | 28 | 33 | 33 | 32 | 3700 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
| H9G4850M12P | 4800-5000 | 28 | 30 | 30 | 31 | 4900 | 寬帶驅動,5G小基站 | LGA7×7 | LDMOS |
Mobile radio
Huatai Company fully utilizes the technical advantages accumulated in high-power and high-frequency RF LDMOS products, and has developed RF LDMOS products for mobile radio products, including RF LDMOS final stage and driver chips for 5W and 2W handheld radios, and applications RF LDMOS chips for professional fields such as vehicle stations and maritime stations.
| Part Num. | Min. Freq（MHz） | Max. Freq （MHz） | VDD (V) | DE （%） | Gain (dB) | Psat （W） | Target application | Package | Process |
| HTU7G06S0P5P | 100 | 1000 | 3.6/7.2 | 70/73 | 10/14 | 0.7/1.5 | 0.5W機，5W/10W機推動 | SOT89 | LDMOS |
| HTU7G06S0P6P | 100 | 1000 | 3.6/7.2 | 67/67 | 10/14 | 0.7/1.5 | 2W/5W機推動 | SOT23 | LDMOS |
| HTU7G06S001P | 100 | 1000 | 3.6/7.2 | 65/65 | 10/14 | 1.3/3.2 | 1W機 | SOT89 | LDMOS |
| HTU7G06S002P | 100 | 1000 | 3.6 | 61 | 14 | 2.6 | 2W機 | SOT89 | LDMOS |
| HTL7G06S006P | 100 | 1000 | 7.2 | 61 | 13 | 6 | 5W機 | SOT89 | LDMOS |
| HTU7G06S009P | 100 | 1000 | 7.2/8.4 | 60 | 12 | 8/9 | 7W模拟機，4W數字機 | SOT89 | LDMOS |
| HTL7G06S004P | 100 | 1000 | 3.6 | 60 | 12 | 4 | 3W機 | PDFN3×3 | LDMOS |
| HTL7G06S005P | 100 | 1000 | 3.6 | 65 | 11 | 5 | 3W機 | PDFN5×5 | LDMOS |
| HTU7G06S007P | 100 | 1000 | 3.6 | 65 | 10 | 7 | 單電池5W機 | PDFN5×5 | LDMOS |
| HTL7G06S011P | 100 | 1000 | 3.6/7.2 | 60/60 | 10/12 | 5/11 | 單電池3W/雙電池10W機 | PDFN5×5 | LDMOS |
| HTM7G06S035P | 100 | 1000 | 12.5 | 61 | 15 | 38 | 車台，軍工電台，應急廣播 | TO-270 | LDMOS |
Huatai's complete and efficient RF LDMOS design and development team has mastered many core technologies and deeply integrated the upstream and downstream of the supply chain. It can develop targeted RF LDMOS products for the special applications of customers in the industrial, scientific and medical industries to meet various Special application requirements.
| Part Num. | Freq (MHz) | VDD (V) | DE (%) | Gain (dB) | P1dB (W) | Test Freq (MHz) | Target application | Package | Process |
| HT647PL | 30-512 | 28 | 67.9 | 23.3 | 200 | CW@450 | 專網，軍用 | H2110S-4L | LDMOS |
| HT647P | 600-1500 | 28 | 59 | 19.7 | 200 | CW@1350 | 專網，軍用 | H2110S-4L | LDMOS |
| HTH7G14S150H | 1.8~1400 | 50 | 56 | 21.5 | 158 | Pulse@860 | 廣播，直放站 | H0906 | LDMOS |
| HTH7G06P300H | 1.8-600 | 50 | 64 | 20.8 | 430(P3dB) | Pulse@435 | 廣播，雷達，通信 | H2110S-4L | LDMOS |
| HT20340S | 1.8-300 | 50 | 80 | 28 | 400(P3dB) | CW@ 40 | 射頻能(néng)量，工業 | TO247 | LDMOS |
| HTH7G06P500H | 1.8-600 | 50 | 60 | 24.6 | 588(P3dB) | Pulse@435 | 廣播，雷達，通信 | H2110S-4L | LDMOS |
| HTH8G07P800H | 470-700 | 50 | 47 | 18 | 800 | DVB-T | 廣播 | H3210-4L | LDMOS |
| HTH8G07P1K0H | 470-700 | 50 | 48 | 18 | 1000 | DVB-T | 廣播 | H3210-4L | LDMOS |
| HTH8G03P1K8H | 1.8-200 | 50 | 72 | 28 | 1800 | CW@60 | 廣播，專網，工業醫療 | H3210S-4L | LDMOS |
For more information or to order products, please contact Xiamen Hejiaxing Sales Office.
Mobile: +86-13600975566
WeChat：13600975566
QQ: 2355620732
Mail：zf@hjx.cn
Enterprise email:hjx@hjx.cn、zjh@hjx.cn
Mobile:13906049004(WeChat)
Xiamen Hejiaxing Electronics Co., Ltd.
